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Show posts MenuQuoteYou used an emitter follower to buffer the bias voltage on the FET source. Is the temperature coefficient of Vbe a problem there? Or does it actually improve stability of the circuit? Likewise for the tempco of the germanium diode.I did not notice any problem with temperature stability.
QuoteSo do you think a Schottky would do instead of a germanium diode?No details of the curves for diodes at currents around 1 mA.
QuoteKMG - any chance you can repost the schematic and/or pictures? I can't load the files in the original post. CheersI Think that is a problem of internet service providers.
Quotewhat i was trying to say is that, with those "sacred values", i knew where they went and what to change, add some caps and do some mod (caswell, levi, etc). But now i'm lost. I don't recognize anything. What i *DO* know is that KMG is doing a great job at emulating tube sound. I have his website on my bookmarks and I was mesmerized 'bout his results long before I posted my question about his SS poweramps at this forum (today a posted another question at freestompboxes forum).These "sacred values" are suitable for given preamplifier when using the same tubes. For example if you replace tube on Russian 6Н2П-ЕВ these values will be different for prorer sound.
I know those values aren't sacred, but that was what i was used to (and I don't like ch-ch-ch-ch-changes)
QuotePerhaps can you post some sample sound of it?At this point still only reamping samples
QuoteI managed to get some samples recently, but I've not tried them yet.While waiting you can try them in simulator, SPICE models you can download there
QuoteI messed around with arrangements of multiple FETs, but the dual gate MOSFET made the most sense. They are still widely available, sadly in tiny SMT packages.These dual-gate MOSFETs is mainly targeted at the AGC control in the RF-frontend and work with a very low scale input voltage.
QuoteHow is the temperature stability of your FET building block?Right now I did some tests. I used a soldering iron to heat the flange of the transistor up to 70 ° C. Changing of static drain voltage in range from 20 ° C to 70 ° C was 4-6 V (for different stages). It`s about 3-5% of change.